PART |
Description |
Maker |
APT40GP90J |
MOSFET POWER MOS 7 IGBT 68 A, 900 V, N-CHANNEL IGBT ISOTOP-4
|
ADPOW[Advanced Power Technology] Advanced Power Electronics, Corp.
|
APT26GU30B |
MOSFET POWER MOS 7 IGBT
|
Advanced Power Technology
|
APT40GP60B APT40GP60S |
POWER MOS 7 IGBT MOSFET
|
Advanced Power Technolo... Advanced Power Technology
|
APT15GP60BDF1 |
MOSFET POWER MOS 7 IGBT
|
Advanced Power Technology Ltd.
|
APT80GP60J |
MOSFET POWER MOS 7 IGBT
|
Advanced Power Technology
|
APT80GP60B2 |
MOSFET POWER MOS 7 IGBT
|
Advanced Power Technology
|
APT45GP120JDQ2 |
75 A, 1200 V, N-CHANNEL IGBT POWER MOS 7 IGBT
|
MICROSEMI POWER PRODUCTS GROUP Advanced Power Technology
|
SPP04N60S5 |
Cool MOS Power Transistor(MOS 型功率晶体管) 4.5 A, 600 V, 0.95 ohm, N-CHANNEL, Si, POWER, MOSFET
|
SIEMENS AG
|
2SK2984 D12356EJ1V0DS00 2SK2984-ZJ 2SK2984-S 2SK29 |
Low voltage 4V drive power MOSFET SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE From old datasheet system MOS Field Effect Transistor
|
NEC[NEC] NEC Corp.
|
IRFBL10N60A |
N-Channel SMPS MOSFET(N娌?? 寮??妯″??垫?MOS?烘?搴??,?ㄤ?楂????C-DC杞???? HEXFET Power MOSFET HEXFET? Power MOSFET 11 A, 600 V, 0.61 ohm, N-CHANNEL, Si, POWER, MOSFET TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 11A I(D) | TO-263VAR
|
IRF[International Rectifier] VISHAY SILICONIX
|
APT46GA90JD40 |
High Speed PT IGBT Insulated Gate Bipolar Transistor - Power MOS 8; Package: ISOTOP®; BV(CES) (V): 900; VCE(sat) (V): 2.5; IC (A): 46; 87 A, 900 V, N-CHANNEL IGBT
|
Microsemi Corporation Microsemi, Corp.
|